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SiC Mosfets

Bild Serie/Typ Hersteller Produktgruppe Artikelkategorie Hauptkategorie Gehäusetyp Sperrspannung [V] RDS on [mOhm] Nennstrom [A] Nennstrom [mA] Nennstrom [25°] Produkt Feature
GeneSiC G3R60MT07J G3R60MT07J GeneSiC Diskret SiC Mosfets Aktive Komponenten TO-263-7 750 60 44
-G3R™ Technology with +15 V Gate Drive -Softer RDS (ON) v/s Temperature dependency -LoRing™ - Electromagnetically Optimized Design -Smaller RG(INT) and Lower QG -Low Device Capacitances (Coss, CRSS) -Superior Cost-Performance Index -Robust Body Diode with Low VF and Low QRR -100% Avalanche (UIL) Tested
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GeneSiC G3R60MT07D G3R60MT07D GeneSiC Diskret SiC Mosfets Aktive Komponenten TO-247-3 750 60 43
-G3R™ Technology with +15 V Gate Drive -Softer RDS (ON) v/s Temperature dependency -LoRing™ - Electromagnetically Optimized Design -Smaller RG(INT) and Lower QG -Low Device Capacitances (Coss, CRSS) -Superior Cost-Performance Index -Robust Body Diode with Low VF and Low QRR -100% Avalanche (UIL) Tested
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GeneSiC G3R60MT07K G3R60MT07K GeneSiC Diskret SiC Mosfets Aktive Komponenten TO-247-4 750 60 37
-G3R™ Technology with +15 V Gate Drive -Softer RDS (ON) v/s Temperature dependency -LoRing™ - Electromagnetically Optimized Design -Smaller RG(INT) and Lower QG -Low Device Capacitances (Coss, CRSS) -Superior Cost-Performance Index -Robust Body Diode with Low VF and Low QRR -100% Avalanche (UIL) Tested
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GeneSiC G3R12MT12K G3R12MT12K GeneSiC Diskret SiC Mosfets Aktive Komponenten TO-247-4 1200 12 157
-G3R™ (3rd Generation) Technology -Low Temperature Coefficient of RDS (ON) -Lower QG and Smaller RG(INT) -Low Device Capacitances (Coss, CRSS) -LoRing™ - Electromagnetically Optimized Design -Superior Cost-Performance Index -Robust Body Diode with Low VF and Low QRR -100% Avalanche (UIL) Tested
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GeneSiC G3R20MT12K G3R20MT12K GeneSiC Diskret SiC Mosfets Aktive Komponenten TO-247-4 1200 20 100
-G3R™ (3rd Generation) Technology -Low Temperature Coefficient of RDS (ON) -Lower QG and Smaller RG(INT) -Low Device Capacitances (Coss, CRSS) -LoRing™ - Electromagnetically Optimized Design -Superior Cost-Performance Index -Robust Body Diode with Low VF and Low QRR -100% Avalanche (UIL) Tested
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GeneSiC G3R20MT12N G3R20MT12N GeneSiC Diskret SiC Mosfets Aktive Komponenten SOT-227 1200 20 90
-G3R™ Technology with +15 V Gate Drive -Softer RDS (ON) v/s Temperature dependency -LoRing™ - Electromagnetically Optimized Design -Smaller RG(INT) and Lower QG -Low Device Capacitances (Coss, CRSS) -Superior Cost-Performance Index -Robust Body Diode with Low VF and Low QRR -Isolated Back-side
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GeneSiC G3R30MT12J G3R30MT12J GeneSiC Diskret SiC Mosfets Aktive Komponenten TO-263-7 1200 30 85
-G3R™ (3rd Generation) Technology -Low Temperature Coefficient of RDS (ON) -Lower QG and Smaller RG(INT) -Low Device Capacitances (Coss, CRSS) -LoRing™ - Electromagnetically Optimized Design -Superior Cost-Performance Index -Robust Body Diode with Low VF and Low QRR -100% Avalanche (UIL) Tested
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GeneSiC G3R30MT12K G3R30MT12K GeneSiC Diskret SiC Mosfets Aktive Komponenten TO-247-4 1200 30 70
-G3R™ (3rd Generation) Technology -Low Temperature Coefficient of RDS (ON) -Lower QG and Smaller RG(INT) -Low Device Capacitances (Coss, CRSS) -LoRing™ - Electromagnetically Optimized Design -Superior Cost-Performance Index -Robust Body Diode with Low VF and Low QRR -100% Avalanche (UIL) Tested
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GeneSiC G3R40MT12J G3R40MT12J GeneSiC Diskret SiC Mosfets Aktive Komponenten TO-263-7 1200 40 66
-G3R™ (3rd Generation) Technology -Low Temperature Coefficient of RDS (ON) -Lower QG and Smaller RG(INT) -Low Device Capacitances (Coss, CRSS) -LoRing™ - Electromagnetically Optimized Design -Superior Cost-Performance Index -Robust Body Diode with Low VF and Low QRR -100% Avalanche (UIL) Tested
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GeneSiC G3R40MT12D G3R40MT12D GeneSiC Diskret SiC Mosfets Aktive Komponenten TO-247-3 1200 40 63
-G3R™ (3rd Generation) Technology -Low Temperature Coefficient of RDS (ON) -Lower QG and Smaller RG(INT) -Low Device Capacitances (Coss, CRSS) -LoRing™ - Electromagnetically Optimized Design -Superior Cost-Performance Index -Robust Body Diode with Low VF and Low QRR -100% Avalanche (UIL) Tested
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GeneSiC G3R40MT12K G3R40MT12K GeneSiC Diskret SiC Mosfets Aktive Komponenten TO-247-4 1200 40 55
-G3R™ (3rd Generation) Technology -Low Temperature Coefficient of RDS (ON) -Lower QG and Smaller RG(INT) -Low Device Capacitances (Coss, CRSS) -LoRing™ - Electromagnetically Optimized Design -Superior Cost-Performance Index -Robust Body Diode with Low VF and Low QRR -100% Avalanche (UIL) Tested
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GeneSiC G3R75MT12J G3R75MT12J GeneSiC Diskret SiC Mosfets Aktive Komponenten TO-263-7 1200 75 38
-G3R™ (3rd Generation) Technology -Low Temperature Coefficient of RDS (ON) -Lower QG and Smaller RG(INT) -Low Device Capacitances (Coss, CRSS) -LoRing™ - Electromagnetically Optimized Design -Superior Cost-Performance Index -Robust Body Diode with Low VF and Low QRR -100% Avalanche (UIL) Tested
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GeneSiC G3R75MT12D G3R75MT12D GeneSiC Diskret SiC Mosfets Aktive Komponenten TO-247-3 1200 75 36
-G3R™ (3rd Generation) Technology -Low Temperature Coefficient of RDS (ON) -Lower QG and Smaller RG(INT) -Low Device Capacitances (Coss, CRSS) -LoRing™ - Electromagnetically Optimized Design -Superior Cost-Performance Index -Robust Body Diode with Low VF and Low QRR -100% Avalanche (UIL) Tested
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GeneSiC G3R75MT12K G3R75MT12K GeneSiC Diskret SiC Mosfets Aktive Komponenten TO-247-4 1200 75 31
-G3R™ (3rd Generation) Technology -Low Temperature Coefficient of RDS (ON) -Lower QG and Smaller RG(INT) -Low Device Capacitances (Coss, CRSS) -LoRing™ - Electromagnetically Optimized Design -Superior Cost-Performance Index -Robust Body Diode with Low VF and Low QRR -100% Avalanche (UIL) Tested
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GeneSiC G3R160MT12J G3R160MT12J GeneSiC Diskret SiC Mosfets Aktive Komponenten TO-263-7 1200 160 19
-G3R™ (3rd Generation) Technology -Low Temperature Coefficient of RDS (ON) -Lower QG and Smaller RG(INT) -Low Device Capacitances (Coss, CRSS) -LoRing™ - Electromagnetically Optimized Design -Superior Cost-Performance Index -Robust Body Diode with Low VF and Low QRR -100% Avalanche (UIL) Tested
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GeneSiC G3R160MT12D G3R160MT12D GeneSiC Diskret SiC Mosfets Aktive Komponenten TO-247-3 1200 160 19
-G3R™ (3rd Generation) Technology -Low Temperature Coefficient of RDS (ON) -Lower QG and Smaller RG(INT) -Low Device Capacitances (Coss, CRSS) -LoRing™ - Electromagnetically Optimized Design -Superior Cost-Performance Index -Robust Body Diode with Low VF and Low QRR -100% Avalanche (UIL) Tested
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GeneSiC G3R350MT12J G3R350MT12J GeneSiC Diskret SiC Mosfets Aktive Komponenten TO-263-7 1200 350 10
-G3R™ (3rd Generation) Technology -Low Temperature Coefficient of RDS (ON) -Lower QG and Smaller RG(INT) -Low Device Capacitances (Coss, CRSS) -LoRing™ - Electromagnetically Optimized Design -Superior Cost-Performance Index -Robust Body Diode with Low VF and Low QRR -100% Avalanche (UIL) Tested
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GeneSiC G3R350MT12D G3R350MT12D GeneSiC Diskret SiC Mosfets Aktive Komponenten TO-247-3 1200 350 10
-G3R™ (3rd Generation) Technology -Low Temperature Coefficient of RDS (ON) -Lower QG and Smaller RG(INT) -Low Device Capacitances (Coss, CRSS) -LoRing™ - Electromagnetically Optimized Design -Superior Cost-Performance Index -Robust Body Diode with Low VF and Low QRR -100% Avalanche (UIL) Tested
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GeneSiC G3R20MT17K G3R20MT17K GeneSiC Diskret SiC Mosfets Aktive Komponenten TO-247-4 1700 20 95
-G3R™ Technology with +15 V Gate Drive -Softer RDS (ON) v/s Temperature dependency -LoRing™ - Electromagnetically Optimized Design -Smaller RG(INT) and Lower QG -Low Device Capacitances (Coss, CRSS) -Superior Cost-Performance Index -Robust Body Diode with Low VF and Low QRR -Industry-Leading UIL and short-Circuit Robustness

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GeneSiC G3R20MT17N G3R20MT17N GeneSiC Diskret SiC Mosfets Aktive Komponenten SOT-227 1700 20 84
-G3R™ Technology with +15 V Gate Drive -Softer RDS (ON) v/s Temperature dependency -LoRing™ - Electromagnetically Optimized Design -Smaller RG(INT) and Lower QG -Low Device Capacitances (Coss, CRSS) -Industry-Leading UIL and short-Circuit Robustness -Robust Body Diode with Low VF and Low QRR -Isolated Back-side
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GeneSiC G3R45MT17D G3R45MT17D GeneSiC Diskret SiC Mosfets Aktive Komponenten TO-247-3 1700 45 52
-G3R™ Technology with +15 V Gate Drive -Softer RDS (ON) v/s Temperature dependency -LoRing™ - Electromagnetically Optimized Design -Smaller RG(INT) and Lower QG -Low Device Capacitances (Coss, CRSS) -Superior Cost-Performance Index -Robust Body Diode with Low VF and Low QRR -Industry-Leading UIL and short-Circuit Robustness

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GeneSiC G3R45MT17K G3R45MT17K GeneSiC Diskret SiC Mosfets Aktive Komponenten TO-247-4 1700 45 46
-G3R™ Technology with +15 V Gate Drive -Softer RDS (ON) v/s Temperature dependency -LoRing™ - Electromagnetically Optimized Design -Smaller RG(INT) and Lower QG -Low Device Capacitances (Coss, CRSS) -Superior Cost-Performance Index -Robust Body Diode with Low VF and Low QRR -Industry-Leading UIL and short-Circuit Robustness

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GeneSiC G3R160MT17J G3R160MT17J GeneSiC Diskret SiC Mosfets Aktive Komponenten TO-263-7 1700 160 18
-G3R™ Technology with +15 V Gate Drive -Softer RDS (ON) v/s Temperature dependency -LoRing™ - Electromagnetically Optimized Design -Smaller RG(INT) and Lower QG -Low Device Capacitances (Coss, CRSS) -Superior Cost-Performance Index -Robust Body Diode with Low VF and Low QRR -Optimized Package with seperate Driver Source Pin

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GeneSiC G3R160MT17D G3R160MT17D GeneSiC Diskret SiC Mosfets Aktive Komponenten TO-247-3 1700 160 17
-G3R™ Technology with +15 V Gate Drive -Softer RDS (ON) v/s Temperature dependency -LoRing™ - Electromagnetically Optimized Design -Smaller RG(INT) and Lower QG -Low Device Capacitances (Coss, CRSS) -Superior Cost-Performance Index -Robust Body Diode with Low VF and Low QRR -Industry-Leading UIL and short-Circuit Robustness
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GeneSiC G3R450MT17J G3R450MT17J GeneSiC Diskret SiC Mosfets Aktive Komponenten TO-263-7 1700 450 8
-G3R™ Technology with +15 V Gate Drive -Softer RDS (ON) v/s Temperature dependency -LoRing™ - Electromagnetically Optimized Design -Smaller RG(INT) and Lower QG -Low Device Capacitances (Coss, CRSS) -Superior Cost-Performance Index -Robust Body Diode with Low VF and Low QRR -Optimized Package with seperate Driver Source Pin

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GeneSiC G3R450MT17D G3R450MT17D GeneSiC Diskret SiC Mosfets Aktive Komponenten TO-247-3 1700 450 7
-G3R™ Technology with +15 V Gate Drive -Softer RDS (ON) v/s Temperature dependency -LoRing™ - Electromagnetically Optimized Design -Smaller RG(INT) and Lower QG -Low Device Capacitances (Coss, CRSS) -Superior Cost-Performance Index -Robust Body Diode with Low VF and Low QRR -Industry-Leading UIL and short-Circuit Robustness
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GeneSiC G2R1000MT17J G2R1000MT17J GeneSiC Diskret SiC Mosfets Aktive Komponenten TO-263-7 1700 1000 5
-G2R™ Technology -Softer RDS (ON) v/s Temperature dependency -LoRing™ - Electromagnetically Optimized Design -Smaller RG(INT) and Lower QG -Low Device Capacitances (Coss, CRSS) -Industry-Leading UIL and short-Circuit Robustness -Robust Body Diode with Low VF and Low QRR -Optimized Package with seperate Driver Source Pin

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GeneSiC G2R1000MT17D G2R1000MT17D GeneSiC Diskret SiC Mosfets Aktive Komponenten TO-247-3 1700 1000 5
-G2R™ Technology -Softer RDS (ON) v/s Temperature dependency -LoRing™ - Electromagnetically Optimized Design -Smaller RG(INT) and Lower QG -Low Device Capacitances (Coss, CRSS) -Superior Cost-Performance Index -Robust Body Diode with Low VF and Low QRR -Industry-Leading UIL and short-Circuit Robustness
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GeneSiC G2R50MT33K G2R50MT33K GeneSiC Diskret SiC Mosfets Aktive Komponenten TO-247-4 3300 50 63
-Softer RDS (ON) v/s Temperature dependency -LoRing™ - Electromagnetically Optimized Design -Smaller RG(INT) and Lower QG -Low Device Capacitances (Coss, CRSS) -Industry-Leading UIL and short-Circuit Robustness -Robust Body Diode with Low VF and Low QRR -Normally Off-stable Temperature upto 175°C -Optimized Package with seperate Driver Source Pin
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GeneSiC G2R120MT33J G2R120MT33J GeneSiC Diskret SiC Mosfets Aktive Komponenten TO-263-7 3300 120 33
-Softer RDS (ON) v/s Temperature dependency -LoRing™ - Electromagnetically Optimized Design -Smaller RG(INT) and Lower QG -Low Device Capacitances (Coss, CRSS) -Industry-Leading UIL and short-Circuit Robustness -Robust Body Diode with Low VF and Low QRR -Normally Off-stable Temperature upto 175°C -Optimized Package with seperate Driver Source Pin
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GeneSiC G2R1000MT33J G2R1000MT33J GeneSiC Diskret SiC Mosfets Aktive Komponenten TO-263-7 3300 1000 5
-Softer RDS (ON) v/s Temperature dependency -LoRing™ - Electromagnetically Optimized Design -Smaller RG(INT) and Lower QG -Low Device Capacitances (Coss, CRSS) -Industry-Leading UIL and short-Circuit Robustness -Robust Body Diode with Low VF and Low QRR -Normally Off-stable Temperature upto 175°C -Optimized Package with seperate Driver Source Pin
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No Image G3R10MT07-CAL GeneSiC Bare Die SiC Mosfets Aktive Komponenten 750 10 100 100000
-G3R™ (3rd Generation) Technology -Low Temperature Coefficient of RDS (ON) -Lower QG and Smaller RG(INT) -Low Device Capacitances (Coss, CRSS) -LoRing™ - Electromagnetically Optimized Design -Superior Cost-Performance Index -Robust Body Diode with Low VF and Low QRR -100% Avalanche (UIL) Tested -Industry-Leading UIL and short-Circuit Robustness
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No Image G3R10MT07-CAU GeneSiC Bare Die SiC Mosfets Aktive Komponenten 750 10 100 100000
-G3R™ (3rd Generation) Technology -Low Temperature Coefficient of RDS (ON) -Lower QG and Smaller RG(INT) -Low Device Capacitances (Coss, CRSS) -LoRing™ - Electromagnetically Optimized Design -Superior Cost-Performance Index -Robust Body Diode with Low VF and Low QRR -Industry-Leading UIL and short-Circuit Robustness
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No Image G4R10MT12-CAU GeneSiC Bare Die SiC Mosfets Aktive Komponenten 1200 10 120 120000
-G4R™ (3rd Generation) Technology -Low Temperature Coefficient of RDS (ON) -Lower QG and Smaller RG(INT) -Low Device Capacitances (Coss, CRSS) -LoRing™ - Electromagnetically Optimized Design -Superior Cost-Performance Index -Robust Body Diode with Low VF and Low QRR -Industry-Leading UIL and short-Circuit Robustness
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No Image G4R10MT12-CAL GeneSiC Bare Die SiC Mosfets Aktive Komponenten 1200 10 120 120000
-G4R™ (3rd Generation) Technology -Low Temperature Coefficient of RDS (ON) -Lower QG and Smaller RG(INT) -Low Device Capacitances (Coss, CRSS) -LoRing™ - Electromagnetically Optimized Design -Superior Cost-Performance Index -Robust Body Diode with Low VF and Low QRR -Industry-Leading UIL and short-Circuit Robustness
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No Image G3R12MT12-CAL GeneSiC Bare Die SiC Mosfets Aktive Komponenten 1200 12 100 100000
-G3R™ (3rd Generation) Technology -Softer RDS (ON) v/s Temperature dependency -LoRing™ - Electromagnetically Optimized Design -Lower QG and Smaller RG(INT) -Low Device Capacitances (Coss, CRSS) -Superior Cost-Performance Index -Robust Body Diode with Low VF and Low QRR -Industry-Leading UIL and short-Circuit Robustness
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No Image G3R20MT12-CAL GeneSiC Bare Die SiC Mosfets Aktive Komponenten 1200 20 60 60000
-G3R™ (3rd Generation) Technology -Softer RDS (ON) v/s Temperature dependency -LoRing™ - Electromagnetically Optimized Design -Smaller RG(INT) and Lower QG -Low Device Capacitances (Coss, CRSS) -Superior Cost-Performance Index -Robust Body Diode with Low VF and Low QRR -Industry-Leading UIL and short-Circuit Robustness
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No Image G3R30MT12-CAL GeneSiC Bare Die SiC Mosfets Aktive Komponenten 1200 30 45 45000
-G3R™ (3rd Generation) Technology -Softer RDS (ON) v/s Temperature dependency -LoRing™ - Electromagnetically Optimized Design -Smaller RG(INT) and Lower QG -Low Device Capacitances (Coss, CRSS) -Superior Cost-Performance Index -Robust Body Diode with Low VF and Low QRR -Industry-Leading UIL and short-Circuit Robustness
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No Image G3R20MT17-CAL GeneSiC Bare Die SiC Mosfets Aktive Komponenten 1700 20 75 75000
-G3R™ Technology with +15 V Gate Drive -Softer RDS (ON) v/s Temperature dependency -LoRing™ - Electromagnetically Optimized Design -Smaller RG(INT) and Lower QG -Low Device Capacitances (Coss, CRSS) -Superior Cost-Performance Index -Robust Body Diode with Low VF and Low QRR -Industry-Leading UIL and short-Circuit Robustness
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No Image G3R45MT17-CAL GeneSiC Bare Die SiC Mosfets Aktive Komponenten 1700 45 35 35000
-G3R™ Technology with +15 V Gate Drive -Softer RDS (ON) v/s Temperature dependency -LoRing™ - Electromagnetically Optimized Design -Smaller RG(INT) and Lower QG -Low Device Capacitances (Coss, CRSS) -Superior Cost-Performance Index -Robust Body Diode with Low VF and Low QRR -Industry-Leading UIL and short-Circuit Robustness
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No Image G2R50MT33-CAL GeneSiC Bare Die SiC Mosfets Aktive Komponenten 3300 50 50 50000
-Softer RDS (ON) v/s Temperature dependency -LoRing™ - Electromagnetically Optimized Design -Smaller RG(INT) and Lower QG -Low Device Capacitances (Coss, CRSS) -Superior Cost-Performance Index -Robust Body Diode with Low VF and Low QRR -Normally Off-stable temperature up to 175° C -Industry-Leading UIL and short-Circuit Robustness
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No Image G2R300MT65-CAL GeneSiC Bare Die SiC Mosfets Aktive Komponenten 6500 300 10 10000
-G2R™ Technology with +20 V / -5 V Gate Drive -Superior QG X RDS (ON) Figure of Merit -Low Capacitances and Low gate charge -Normally Off-stable operation up to 175° C -Fast and reliable body Diode -High Avalanche and short circuit Ruggedness -Low condition Losses at High Temperature
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No Image G2R325MS65-CAL GeneSiC Bare Die SiC Mosfets Aktive Komponenten 6500 325 10 10000
-G2R™ Technology with +20 V / -5 V Gate Drive -Superior QG X RDS (ON) Figure of Merit -Low Capacitances and Low gate charge -Normally Off-stable operation up to 175° C -Fast and Reliable Integrated Schottky Diode -High Avalanche and short circuit Ruggedness -Low condition Losses at High Temperature
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